【作 者】Litvinenko, K.Lynch, S. A.Vinh, N. Q.Redlich, B.Greenland, P. T.van der Meer, A. F. G.Paul, D. J.Aeppli, G.Stoneham, A. M.Warner, M.Murdin, B. N.Pidgeon, C. R.
【作者单位】1 FOM Institute for Plasma Physics Rijnhuizen, P.O. Box 1207, NL-3430 BE Nieuwegein, The Netherlands 2 London Centre for Nanotechnology and Department of Physics and Astronomy, University College London, London WC1 H OAH, England 3 Advanced Technology Institute, University of Surrey, Guildford GU2 7XH, England 4 Department of Electronics and Electrical Engineering, University of Glasgow, Glasgow G12 8LT, Scotland 5 Department of Physics, Heriot-Watt University Riccarton, Edinburgh EH14 4AS, Scotland
【出 处】Proceedings Of The National Academy Of Sciences Of The United States Of America
【摘 要】 One of the great successes of quantum physics is the description of the long-lived Rydberg states of atoms and ions. The Bohr model is equally applicable to donor impurity atoms in semiconductor physics, where the conduction band corresponds to the v... 更多 >> One of the great successes of quantum physics is the description of the long-lived Rydberg states of atoms and ions. The Bohr model is equally applicable to donor impurity atoms in semiconductor physics, where the conduction band corresponds to the vacuum, and the loosely bound electron orbiting a singly charged core has a hydrogen-like spectrum according to the usual Bohr–Sommerfeld formula, shifted to the far-infrared because of the small effective mass and high dielectric constant. Manipulation of Rydberg states in free atoms and ions by single and multiphoton processes has been tremendously productive since the development of pulsed visible laser spectroscopy. The analogous manipulations have not been conducted for donor impurities in silicon. Here, we use the FELIX pulsed free electron laser to perform time-domain measurements of the Rydberg state dynamics in phosphorus- and arsenic-doped silicon and we have obtained lifetimes consistent with frequency domain linewidths for isotopically purified silicon. This implies that the dominant decoherence mechanism for excited Rydberg states is lifetime broadening, just as for atoms in ion traps. The experiments are important because they represent a step toward coherent control and manipulation of atomic-like quantum levels in the most common semiconductor and complement magnetic resonance experiments in the literature, which show extraordinarily long spin lattice relaxation times—key to many well known schemes for quantum computing qubits—for the same impurities. Our results, taken together with the magnetic resonance data and progress in precise placement of single impurities, suggest that doped silicon, the basis for modern microelectronics, is also a model ion trap. << 收起
